Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs

被引：0

作者：

Rim, K ^{[1
]}

Narasimha, S ^{[1
]}

Longstreet, M ^{[1
]}

Mocuta, A ^{[1
]}

Cai, J ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA

来源：

INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel mobility extraction technique showed that the mobility enhancements in strained Si MOSFETs were retained in deep sub-100 nm channel lengths. Mobility measurement in devices with channel lengths down to 40 nm was demonstrated by a dR/dL extraction method. The results confirmed and quantified the mobility enhancements despite the presence of high halo doping in scaled strained Si MOSFETs.

引用

页码：43 / 46

页数：4

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