Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide

被引：13

作者：

Delcourt, Enguerran ^{[1
]}

Nessim, Jebali ^{[1
]}

Bodiou, Loic ^{[1
]}

Baillieul, Marion ^{[2
]}

Baudet, Emeline ^{[2
]}

Lemaitre, Jonathan ^{[1
]}

Nazabal, Virginie ^{[2
]}

Dumeige, Yannick ^{[1
]}

Charrier, Joel ^{[1
]}

机构：

[1] Univ Rennes, Inst FOTON, UMR CNRS 6082, CNRS, BP80518, F-22305 Lannion, France

[2] Univ Rennes, ISCR Inst Sci Chim Rennes, CNRS, UMR 6226, F-35000 Rennes, France

来源：

OPTICAL MATERIALS EXPRESS | 2020年 / 10卷 / 06期

关键词：

OPTICAL NONLINEARITIES; WAVELENGTH CONVERSION; REGENERATION; GLASSES;

D O I：

10.1364/OME.393535

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Third order optical nonlinear effects relying on the instantaneous Kerr effect are investigated in a straight chalcogenide ridge waveguide. The sample consists of a GeSbSe film deposited on a thermally oxidized silicon substrate. Ridge waveguides were processed using photolithography and dry etching techniques. From a 1.1 cm long integrated GeSbSe device, self-phase modulation with a maximum nonlinear phase shift of 2.02 pi for a peak power of 15.8 W and four-wave mixing with an external conversion efficiency of -42.6 dB for a pump power of 28 mW are demonstrated. Experimental results show a good agreement with calculations. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：1440 / 1450

页数：11

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