Z-scan and four-wave mixing characterization of semiconductor cadmium chalcogenide nanomaterials

被引:8
|
作者
Yang, Qiguang [1 ]
Seo, JaeTae
Creekmore, Santiel
Tan, Guolong
Brown, Herbert
Ma, Seong Min
Creekmore, Linwood
Jackson, Ashley
Skyles, Tifney
Tabibi, Bagher
Wang, Huitian
Jung, SungSoo
Namkung, Min
机构
[1] Hampton Univ, Dept Phys, Hampton, VA 23668 USA
[2] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruc, Nanjing 210093, Peoples R China
[3] Korea Res Inst Stand & Sci, Taejon 305600, South Korea
[4] NASA, Goddard Space Flight Ctr, Astrochem Branch, Greenbelt, MD 20771 USA
关键词
D O I
10.1088/1742-6596/38/1/035
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The possible physical origin of third-order nonlinearity of cadmium chalcogenide (Te, Se, and S) semiconductor nanocrystals were discussed based on the results of both Z-scan and degenerate four-wave mixing spectroscopies at 532, 775, 800, and 1064 nm in nanosecond, picosecond, and femtosecond time scale for nonlinear photonic applications.
引用
收藏
页码:144 / 147
页数:4
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