共 50 条
- [43] Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling Journal of Materials Science: Materials in Electronics, 2016, 27 : 2004 - 2013
- [46] Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111) Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2013, 24 (07): : 1338 - 1343
- [49] Dislocation reduction and structural properties of GaN layers grown on N+-implanted AlN/Si (111) substrates. GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 537 - 542