Structural characterization of GaN/AlN/Si (111)

被引:0
|
作者
Molina, SI [1 ]
Sanchez, AM [1 ]
Sanchez-Garcia, MA [1 ]
Calleja, E [1 ]
Calle, F [1 ]
Garcia, R [1 ]
机构
[1] Univ Cadiz, Dept Ciencia Mat Ingn Met & QI, Cadiz 11510, Spain
关键词
D O I
暂无
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
下载
收藏
页码:389 / 390
页数:2
相关论文
共 50 条
  • [31] Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage
    Ratnikov, V. V.
    Kalmykov, A. E.
    Myasoedov, A. V.
    Kukushkin, S. A.
    Osipov, A. V.
    Sorokin, L. M.
    TECHNICAL PHYSICS LETTERS, 2013, 39 (11) : 994 - 997
  • [32] Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage
    V. V. Ratnikov
    A. E. Kalmykov
    A. V. Myasoedov
    S. A. Kukushkin
    A. V. Osipov
    L. M. Sorokin
    Technical Physics Letters, 2013, 39 : 994 - 997
  • [33] High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO
    Lahrèche, H
    Bousquet, V
    Laügt, M
    Tottereau, O
    Vennéguès, P
    Beaumont, B
    Gibart, P
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1487 - 1490
  • [34] The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si (111) template
    Ni, Yiqiang
    He, Zhiyuan
    Zhou, Deqiu
    Yao, Yao
    Yang, Fan
    Zhou, Guilin
    Shen, Zhen
    Zhong, Jian
    Zhen, Yue
    Zhang, Baijun
    Liu, Yang
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 83 : 811 - 818
  • [35] High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO
    Lahrèche, H.
    Bousquet, V.
    Laügt, M.
    Tottereau, O.
    Vennéguès, P.
    Beaumont, B.
    Gibart, P.
    Materials Science Forum, 2000, 338
  • [36] The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si (111) substrates
    Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    Chin. Phys., 2007, 5 (1467-1471):
  • [37] Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system
    Ni, Yiqiang
    He, Zhiyuan
    Yang, Fan
    Zhou, Deqiu
    Yao, Yao
    Zhou, Guilin
    Shen, Zhen
    Zhong, Jian
    Zhen, Yue
    Wu, Zhisheng
    Zhang, Baijun
    Liu, Yang
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (01) : 015505
  • [38] The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates
    Liu Zhe
    Wang Xiao-Liang
    Wang Jun-Xi
    Hu Guo-Xin
    Guo Lun-Chun
    Li Jin-Min
    CHINESE PHYSICS, 2007, 16 (05): : 1467 - 1471
  • [39] Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer
    Ni, XF
    Zhu, LP
    Ye, ZZ
    Zhao, Z
    Tang, HP
    Hong, W
    Zhao, BH
    SURFACE & COATINGS TECHNOLOGY, 2005, 198 (1-3): : 350 - 353
  • [40] Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (111) substrate by MBE
    Yusoff, M. Z. Mohd
    Mahyuddin, A.
    Hassan, Z.
    Abu Hassan, H.
    Abdullah, M. J.
    SUPERLATTICES AND MICROSTRUCTURES, 2013, 64 : 367 - 374