Ammonium Salts: New Synergistic Additive for Chemical Vapor Deposition Growth of MoS2

被引:9
|
作者
Li, Guanmeng [1 ,2 ]
Zhang, Weifeng [1 ]
Zhang, Yan [1 ]
Lee, Yangjin [3 ]
Zhao, Zihan [1 ]
Song, Xue-zhi [2 ]
Tan, Zhenquan [2 ]
Kim, Kwanpyo [3 ]
Liu, Nan [1 ]
机构
[1] Beijing Normal Univ, Coll Chem, Beijing Key Lab Energy Convers & Storage Mat, Beijing 100875, Peoples R China
[2] Dalian Univ Technol, Panjin Branch, State Key Lab Fine Chem, Sch Chem Engn, Panjin 124221, Liaoning, Peoples R China
[3] Yonsei Univ, Dept Phys, Seoul 03722, South Korea
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2021年 / 12卷 / 51期
基金
中国国家自然科学基金;
关键词
D O I
10.1021/acs.jpclett.1c03742
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Controllable and scalable fabrication is the precondition for realizing the large number of superior electronic and catalytic applications of MoS2. Here, we report a new type of synergistic additives, ammonium salts, for chemical vapor deposition (CVD) growth of MoS2. On the basis of the catalysis of ammonium salts, we can achieve layer and shape-controlled MoS2 domains and centimeter-scale MoS2 films. Compared to frequently used alkali metal ions as the catalysts, ammonium salts are decomposed completely at low temperature (below 513 degrees C), resulting in clean and nondestructive as-grown substrates. Thus, MoS2 electronic devices can be directly fabricated on them, and the redundant transfer step is no longer needed. This method can also promote the direct growth of MoS2 on the conductive substrate and boost the improvement of hydrogen evolution reaction (HER) performance. The ammonium salt-mediated CVD method will pave a new way for MoS2 toward real applications in modern electronics and catalysis.
引用
收藏
页码:12384 / 12390
页数:7
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