Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition

被引：0

作者：

张璐 ^{[1
]}

王永生 ^{[1
]}

董艳芳 ^{[1
]}

赵宣 ^{[1
]}

付晨 ^{[1
]}

何大伟 ^{[1
]}

机构：

[1] Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology,Beijing Jiaotong University

来源：

Chinese Physics B | 2018年 / 27卷 / 01期

基金：

中国国家自然科学基金;

关键词：

MoS2; seed; graphene quantum dots(GQDs); continuous film;

D O I：

暂无

中图分类号：

O471.1 [半导体量子理论];

学科分类号：

070205 ; 080501 ; 0809 ; 080903 ;

摘要：

The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition(CVD) process. Herein, graphene quantum dots(GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS2monolayer. The obtained monolayer MoS2films were confirmed by optical microscope,scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS2monolayer was largely homogeneous.

引用

页码：583 / 586

页数：4

共 50 条

[1] Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition
Zhang, Lu
Wang, Yongsheng
Dong, Yanfang
Zhao, Xuan
Fu, Chen
He, Dawei
[J]. CHINESE PHYSICS B, 2018, 27 (01)
[2] Study on the catalyst effect of NaCl on MoS2 growth in a chemical vapor deposition process
Chen, Long
Zang, Lingyu
Chen, Luhua
Wu, Jinchao
Jiang, Chengming
Song, Jinhui
[J]. CRYSTENGCOMM, 2021, 23 (31) : 5337 - 5344
[3] Role of the Growth Temperature in MoS2 Growth by Chemical Vapor Deposition
Kim, Min-Woo
Kim, Ja-Yeon
Cho, Yoo-Hyun
Park, Hyun-Sun
Kwon, Min-Ki
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (03) : 2140 - 2143
[4] Oxygen-assisted growth of monolayer MoS2 films on graphene by chemical vapor deposition
Ding, Binbin
Li, Lianbi
Li, Lei
Wang, Tianming
Zhu, Changjun
Feng, Song
Li, Zebin
Wang, Jun
Zhang, Guoqing
Zang, Yuan
Hu, Jichao
Xia, Caijuan
[J]. VACUUM, 2023, 211
[5] Effect of the geometry of precursor crucibles on the growth of MoS2 flakes by chemical vapor deposition
Wei, Jinlei
Huang, Jing-Kai
Du, Jianhao
Bian, Baoan
Li, Sean
Wang, Danyang
[J]. NEW JOURNAL OF CHEMISTRY, 2020, 44 (48) : 21076 - 21084
[6] Investigation of the Growth Process of Continuous Monolayer MoS2 Films Prepared by Chemical Vapor Deposition
Wang, Wenzhao
Chen, Xiaoxiao
Zeng, Xiangbin
Wu, Shaoxiong
Zeng, Yang
Hu, Yishuo
Xu, Sue
Zhou, Guangtong
Cui, Hongxing
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (09) : 5509 - 5517
[7] Chemical Vapor Deposition of MoS2 films
Mun, Jihun
Kim, Dongbin
Yun, Juyoung
Shin, Yonghyeon
Kang, Sangwoo
Kim, Taesung
[J]. SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11, 2013, 58 (07): : 199 - 202
[8] Investigation of the Growth Process of Continuous Monolayer MoS2 Films Prepared by Chemical Vapor Deposition
Wenzhao Wang
Xiaoxiao Chen
Xiangbin Zeng
Shaoxiong Wu
Yang Zeng
Yishuo Hu
Sue Xu
Guangtong Zhou
Hongxing Cui
[J]. Journal of Electronic Materials, 2018, 47 : 5509 - 5517
[9] Influence of growth temperature on MoS2 synthesis by chemical vapor deposition
Zhu, Zusong
Zhan, Shengbao
Zhang, Jie
Jiang, Guisheng
Yi, Mingfang
Wen, Jun
[J]. MATERIALS RESEARCH EXPRESS, 2019, 6 (09)
[10] Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition
Ling, Xi
Lee, Yi-Hsien
Lin, Yuxuan
Fang, Wenjing
Yu, Lili
Dresselhaus, Mildred S.
Kong, Jing
[J]. NANO LETTERS, 2014, 14 (02) : 464 - 472

← 1 2 3 4 5 →