Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks

被引：23
|
作者：
Cho, Chu-Young [1 ]
Kim, Jae-Joon [2 ]
Lee, Sang-Jun [1 ]
Hong, Sang-Hyun [1 ]
Lee, Kwang Jae [1 ]
Yim, Sang-Youp [3 ]
Park, Seong-Ju [1 ,2 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea
[3] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Kwangju 500712, South Korea
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 12期
基金：
新加坡国家研究基金会;
关键词：
QUANTUM-WELLS; PHOTOLUMINESCENCE;
D O I：
10.1143/APEX.5.122103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the surface plasmon (SP)-enhanced flip-chip blue light-emitting diodes (LEDs) having silver (Ag) disks in the p-GaN layer. The optical output power of an SP-enhanced flip-chip LED with Ag disks is increased by 45% at 20mA without showing any degradation of electrical characteristics, compared with that of a conventional flip-chip LED. The increase in optical output power is attributed to the improved internal quantum efficiency of LEDs because of the increase in the spontaneous emission rate by the resonance coupling between the excitons in multiple quantum wells and the SPs in the Ag disks. (C) 2012 The Japan Society of Applied Physics
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页数：3
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