Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks

被引：23
|
作者：
Cho, Chu-Young [1 ]
Kim, Jae-Joon [2 ]
Lee, Sang-Jun [1 ]
Hong, Sang-Hyun [1 ]
Lee, Kwang Jae [1 ]
Yim, Sang-Youp [3 ]
Park, Seong-Ju [1 ,2 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea
[3] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Kwangju 500712, South Korea
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 12期
基金：
新加坡国家研究基金会;
关键词：
QUANTUM-WELLS; PHOTOLUMINESCENCE;
D O I：
10.1143/APEX.5.122103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the surface plasmon (SP)-enhanced flip-chip blue light-emitting diodes (LEDs) having silver (Ag) disks in the p-GaN layer. The optical output power of an SP-enhanced flip-chip LED with Ag disks is increased by 45% at 20mA without showing any degradation of electrical characteristics, compared with that of a conventional flip-chip LED. The increase in optical output power is attributed to the improved internal quantum efficiency of LEDs because of the increase in the spontaneous emission rate by the resonance coupling between the excitons in multiple quantum wells and the SPs in the Ag disks. (C) 2012 The Japan Society of Applied Physics
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres
    Liu, Mai-Chih
    Lin, Chang-Rong
    Chan, Chia-Hua
    AIP ADVANCES, 2016, 6 (11):
  • [32] High power and high reliability GaN/InGaN flip-chip light-emitting diodes
    Zhang Jian-Ming
    Zou De-Shu
    Xu Chen
    Zhu Yan-Xu
    Liang Ting
    Da Xiao-Li
    Shen Guang-Di
    CHINESE PHYSICS, 2007, 16 (04): : 1135 - 1139
  • [33] Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes
    Song, JO
    Hong, WK
    Park, Y
    Kwak, JS
    Seong, TY
    APPLIED PHYSICS LETTERS, 2005, 86 (13) : 1 - 3
  • [34] Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
    Hurni, Christophe A.
    David, Aurelien
    Cich, Michael J.
    Aldaz, Rafael I.
    Ellis, Bryan
    Huang, Kevin
    Tyagi, Anurag
    DeLille, Remi A.
    Craven, Michael D.
    Steranka, Frank M.
    Krames, Michael R.
    APPLIED PHYSICS LETTERS, 2015, 106 (03)
  • [35] Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface
    Zeng, X. F.
    Chang, S. J.
    Shei, Shih-Chang
    INNOVATION, COMMUNICATION AND ENGINEERING, 2014, : 265 - 268
  • [36] Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide
    Kim, Ja-Yeon
    Kwon, Min-Ki
    Park, Il-Kyu
    Cho, Chu-Young
    Park, Seong-Ju
    Jeon, Dong-Min
    Kim, Je Won
    Kim, Yong Chun
    APPLIED PHYSICS LETTERS, 2008, 93 (02)
  • [37] Origin of efficiency droop in GaN-based light-emitting diodes
    Kim, Min-Ho
    Schubert, Martin F.
    Dai, Qi
    Kim, Jong Kyu
    Schubert, E. Fred
    Piprek, Joachim
    Park, Yongjo
    APPLIED PHYSICS LETTERS, 2007, 91 (18)
  • [38] Analysis of light extraction efficiency of GaN-based light-emitting diodes
    Wang, Pei
    Cao, Bin
    Gan, Zhiyin
    Liu, Sheng
    3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 2011, 276
  • [39] Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods
    An Tielei
    Sun Bo
    Wei Tongbo
    Zhao Lixia
    Duan Ruifei
    Liao Yuanxun
    Li Jinmin
    Yi Futing
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (11)
  • [40] Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods
    安铁雷
    孙波
    魏同波
    赵丽霞
    段瑞飞
    廖元勋
    李晋闽
    伊福廷
    Journal of Semiconductors, 2013, (11) : 53 - 56
12345