Chemical vapor deposition of boron- and nitrogen-containing graphene thin films

被引：22
|
作者：
Suzuki, Satoru [1 ]
Hibino, Hiroki [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 02期
关键词：
Graphene; h-BN; CVD; Polycrystalline Ni substrates; CARBON NANOTUBES; DOPED SINGLE; NITRIDE; SPECTRA; LAYERS;
D O I：
10.1016/j.mseb.2011.10.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Boron and nitrogen-incorporated graphene thin films were grown on polycrystalline Ni substrates by thermal chemical vapor deposition using separate boron- and nitrogen-containing feedstocks. Boron and nitrogen atoms were incorporated in the film in almost equal amounts and the total content reached similar to 28%. The film predominantly consisted of separate graphene and boron nitride domains. Carrier concentration in the graphene domains was estimated to be about 1 x 10(-3) e/atom (3.8 x 10(12) cm(-2)) from G band shift in Raman spectra. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：233 / 238
页数：6
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