Chemical Vapor Deposition of Silicon Oxynitride Films onto Silicon by the Pyrolysis of Hexamethyl Disilazane with Nitrogen-Containing Additives

被引：0
|
作者：
Mittov O.N. [1 ]
Ponomareva N.I. [1 ]
Mittova I.Ya. [1 ]
Bezryadin M.N. [1 ]
机构：
[1] Voronezh State University, Voronezh
来源：
Russian Microelectronics | 2001年 / 31卷 / 1期
关键词：
Silicon; Growth Rate; Argon; Pyrolysis; Thermal Decomposition;
D O I：
10.1023/A:1013800921927
中图分类号：
学科分类号：
摘要：
The chemical vapor deposition onto silicon substrates by the thermal decomposition of hexamethyl disilazane (HMDS) is studied experimentally. In addition to HMDS, the gas mixture contains argon and one or two additives, which may be N2O, NH3, O2, or H2O. The growth rate, composition, and electrical properties of films produced are analyzed, and a relationship between them and the type of gas mixture employed is revealed. A possible mechanism of deposition is proposed for the case where N2O or N2O + NH3 serves as the additive.
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页码：13 / 20
页数：7
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