Model of the 1/f noise in GaN/AlGaN heterojunction field effect transistors

被引：0
|
作者：
Levinshtein, ME [1 ]
Dmitriev, AP [1 ]
Rumyantsev, SL [1 ]
Shur, MS [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, Solid State Elect Div, St Petersburg 194021, Russia
来源：
Noise and Fluctuations | 2005年 / 780卷
关键词：
1/f noise; tunneling; GaN/AlGaN; heterostructures;
D O I：
暂无
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
The model describing the 1/f noise in GaN/AlGaN Heterojunction Field Effect Transistors (HFETs) has been proposed. This model links the 1/f noise to the phonon assisted tunneling from the two dimensional electron gas in the device channel into the tail states near the conduction band of the GaN layer. The model predicts a fairly weak temperature dependence of the 1/f noise in the temperature interval from 50 K to 600 K with the value of the Hooge parameter alpha within the range of 10(-3) - 10(-5). Both these predictions are in agreement with experimental data.
引用
收藏
页码：291 / 294
页数：4
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