Electronic properties of H and D doped ZnO epitaxial films

被引：21
|
作者：
Li, Y. J. [1 ]
Kaspar, T. C. [1 ]
Droubay, T. C. [1 ]
Zhu, Z. [1 ]
Shutthanandan, V. [1 ]
Nachimuthu, P. [1 ]
Chambers, S. A. [1 ]
机构：
[1] Pacific NW Natl Lab, Div Chem & Mat Sci, Richland, WA 99352 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2911723
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO epitaxial films grown by pulsed laser deposition in an ambient of H-2 or D-2 exhibit qualitatively different electronic properties compared to films grown in vacuum or O-2 or bulk single crystals annealed in H-2. These include temperature-independent resistivities of similar to 0.1 Omega cm, carrier (electron) concentrations in the 10(18) cm(-3) range, mobilities of 20-40 cm(2)/V s, and negligible (a few meV) activation energies for conduction. These transport properties are consistent with H (D) forming an ultrashallow donor or conduction band states not achievable by postgrowth annealing in H-2. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
    Wachnicki, L.
    Duzynska, A.
    Domagala, J. Z.
    Witkowski, B. S.
    Krajewski, T. A.
    Przezdziecka, E.
    Guziewicz, M.
    Wierzbicka, A.
    Kopalko, K.
    Figge, S.
    Hommel, D.
    Godlewski, M.
    Guziewicz, E.
    ACTA PHYSICA POLONICA A, 2011, 120 (6A) : A7 - A10
  • [32] Structural and magnetic analysis of epitaxial films of Gd-doped ZnO
    Ney, V.
    Ye, S.
    Kammermeier, T.
    Ollefs, K.
    Wilhelm, F.
    Rogalev, A.
    Lebegue, S.
    da Rosa, A. L.
    Ney, A.
    PHYSICAL REVIEW B, 2012, 85 (23)
  • [33] Magnetoresistance of 3d transition metal single-doped and co-doped epitaxial ZnO thin films
    Ji, Gen-Hua
    Gu, Zheng-Bin
    Lu, Ming-Hui
    Wu, Di
    Zhang, Shan-Tao
    Zhu, Yong-Yuan
    Zhu, Shi-Ning
    Chen, Yan-Feng
    Pan, X. Q.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (8-11) : 1112 - 1115
  • [34] Contributions of magnetic properties in epitaxial copper-doped ZnO
    Liu, Hongyan
    Zeng, Fei
    Gao, Shuang
    Wang, Guangyue
    Song, Cheng
    Pan, Feng
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2013, 15 (31) : 13153 - 13161
  • [35] Properties of Ga-doped ZnO films
    Miyazaki, M
    Sato, K
    Mitsui, A
    Nishimura, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 218 : 323 - 328
  • [36] Properties of Ga-doped ZnO films
    Miyazaki, M.
    Sato, K.
    Mitsui, A.
    Nishimura, H.
    Journal of Non-Crystalline Solids, 1997, 218 : 323 - 328
  • [37] On the properties of indium doped ZnO thin films
    Kumar, PMR
    Kartha, CS
    Vijayakumar, KP
    Abe, T
    Kashiwaba, Y
    Singh, F
    Avasthi, DK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (02) : 120 - 126
  • [38] Electronic structure modification of ZnO and Al-doped ZnO films by ions
    Matsunami, N
    Fukuoka, O
    Tazawa, M
    Sataka, M
    SURFACE & COATINGS TECHNOLOGY, 2005, 196 (1-3): : 50 - 55
  • [39] Optical properties and electronic structure of epitaxial uranium films
    Wu, Jian
    Zhang, Yun
    Chen, Qiuyun
    Wang, Yonghuan
    Feng, Wei
    Zhang, Qiang
    Yang, Xiangfei
    Zhu, Xiegang
    Hao, Qunqing
    Liu, Qin
    Lai, Xinchun
    APPLIED SURFACE SCIENCE, 2024, 672
  • [40] PROPERTIES OF BORON-DOPED EPITAXIAL DIAMOND FILMS
    FUJIMORI, N
    NAKAHATA, H
    IMAI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (05): : 824 - 827
12345