Electronic properties of H and D doped ZnO epitaxial films

被引：21
|
作者：
Li, Y. J. [1 ]
Kaspar, T. C. [1 ]
Droubay, T. C. [1 ]
Zhu, Z. [1 ]
Shutthanandan, V. [1 ]
Nachimuthu, P. [1 ]
Chambers, S. A. [1 ]
机构：
[1] Pacific NW Natl Lab, Div Chem & Mat Sci, Richland, WA 99352 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2911723
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO epitaxial films grown by pulsed laser deposition in an ambient of H-2 or D-2 exhibit qualitatively different electronic properties compared to films grown in vacuum or O-2 or bulk single crystals annealed in H-2. These include temperature-independent resistivities of similar to 0.1 Omega cm, carrier (electron) concentrations in the 10(18) cm(-3) range, mobilities of 20-40 cm(2)/V s, and negligible (a few meV) activation energies for conduction. These transport properties are consistent with H (D) forming an ultrashallow donor or conduction band states not achievable by postgrowth annealing in H-2. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition
    Liu, ZF
    Shan, FK
    Li, YX
    Shin, BC
    Yu, YS
    JOURNAL OF CRYSTAL GROWTH, 2003, 259 (1-2) : 130 - 136
  • [22] Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films
    Noh, Jun Hong
    Cho, In-Sun
    Lee, Sangwook
    Cho, Chin Moo
    Han, Hyun Soo
    An, Jae-Sul
    Kwak, Chae Hyun
    Kim, Jin Yong
    Jung, Hyun Suk
    Lee, Jung-Kun
    Hong, Kug Sun
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (09): : 2133 - 2138
  • [23] Tailorable properties of Nd-doped ZnO epitaxial thin films for optoelectronic and plasmonic devices
    Nistor, Magdalena
    Gherendi, Florin
    Perriere, Jacques
    OPTICAL MATERIALS, 2022, 126
  • [24] DFT study of electronic properties of N-doped ZnO and ZnO/Cu(111) bilayer films
    Ho Viet Thang
    Thong Le Minh Pham
    Pacchioni, Gianfranco
    SURFACE SCIENCE, 2022, 716
  • [25] Role of defects in the electronic properties of Al doped ZnO films deposited by spray pyrolysis
    Anurag Kumar
    Md. Imteyaz Ahmad
    Journal of Materials Science, 2022, 57 : 7877 - 7895
  • [26] Correlation between electronic structure and magnetic properties of Fe-doped ZnO films
    Chen, T., 1600, American Institute of Physics Inc. (111):
  • [27] Annealing effect on the electronic structure and magnetic properties of Mn-doped ZnO films
    Jin, J.
    Zhang, X. Y.
    Zhou, Y. X.
    Chang, G. S.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (03)
  • [28] Role of defects in the electronic properties of Al doped ZnO films deposited by spray pyrolysis
    Kumar, Anurag
    Ahmad, Md Imteyaz
    JOURNAL OF MATERIALS SCIENCE, 2022, 57 (16) : 7877 - 7895
  • [29] Correlation between electronic structure and magnetic properties of Fe-doped ZnO films
    Chen, Tiexin
    Cao, Liang
    Zhang, Wenhua
    Zhang, Wang
    Han, Yuyan
    Zheng, Zhiyuan
    Xu, Faqiang
    Kurash, Ibrahim
    Qian, Haijie
    Wang, Jia'ou
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (12)
  • [30] Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films
    Jin, ZW
    Murakami, M
    Fukumura, T
    Matsumoto, Y
    Ohtomo, A
    Kawasaki, M
    Koinuma, H
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 55 - 58
12345