Intersubband absorption in ZnO/ZnMgO quantum wells grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates

被引:7
|
作者
Zhao, Kuaile [1 ]
Chen, Guopeng [1 ]
Hernandez, Juliana [2 ]
Tamargo, Maria C. [3 ]
Shen, Aidong [1 ]
机构
[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA
[2] Univ Calif Santa Cruz, Dept Elect Engn, Santa Cruz, CA 95064 USA
[3] CUNY City Coll, Dept Chem, New York, NY 10031 USA
基金
美国国家科学基金会;
关键词
Molecular beam epitaxy; Quantum well; Oxides; Semiconducting II-VI materials; Heterojunction semiconductor devices; TRANSITION;
D O I
10.1016/j.jcrysgro.2015.02.002
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The authors report the growth of ZnO/ZnMgO multiple quantum well (MQW) structures by plasmaassisted molecular beam epitaxy. A set of three MQW samples with different well thicknesses were grown on c-plane sapphire substrates. Structural and optical properties of the samples were characterized by reflection high-energy electron diffraction, high-resolution x-ray diffraction (XRD) and photoluminescence measurements. Clear superlattice satellite peaks and thickness fringes observed in XRD measurements indicate the formation of periodic structure with good interfacial quality and high crystalline quality. Mid infrared absorptions around 3 pm are observed from Fourier transform infrared spectroscopy measurement The polarization-dependent absorption proves that the absorptions are originated from intersubband transitions. (C) 2015 Elsevier B.V. All rights reserve
引用
收藏
页码:221 / 224
页数:4
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