Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties

被引：51

作者：

Zhao, JL

Li, XM ^{[1
]}

Bian, JM

Yu, WD

Zhang, CY

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 280卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

dope; growth mechanism; ultrasonic spray pyrolysis; p-type ZnO film;

D O I：

10.1016/j.jcrysgro.2005.03.079

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Nitrogen-doped ZnO films were deposited on silicon (100) substrate using zinc acetate and ammonium acetate aqueous solution as precursors by ultrasonic spray pyrolysis. Successful p-type doping can be realized at optimized substrate temperature. The p-type ZnO films show excellent electrical properties such as hole concentration of similar to 10(18)cm(-3), hole mobility of similar to 10(2)cm(2)V(-1) s(-1) and resistivity of similar to 10(-2) Omega cm. In the photoluminescence measurement, a strong near-band-edge emission was observed, while the deep-level emission was almost undetectable in both undoped and N-doped ZnO films. The growth and doping mechanism of N-doped ZnO films were discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

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页码：495 / 501

页数：7

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