Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties

被引：51
|
作者：
Zhao, JL
Li, XM [1 ]
Bian, JM
Yu, WD
Zhang, CY
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 280卷 / 3-4期
基金：
中国国家自然科学基金;
关键词：
dope; growth mechanism; ultrasonic spray pyrolysis; p-type ZnO film;
D O I：
10.1016/j.jcrysgro.2005.03.079
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Nitrogen-doped ZnO films were deposited on silicon (100) substrate using zinc acetate and ammonium acetate aqueous solution as precursors by ultrasonic spray pyrolysis. Successful p-type doping can be realized at optimized substrate temperature. The p-type ZnO films show excellent electrical properties such as hole concentration of similar to 10(18)cm(-3), hole mobility of similar to 10(2)cm(2)V(-1) s(-1) and resistivity of similar to 10(-2) Omega cm. In the photoluminescence measurement, a strong near-band-edge emission was observed, while the deep-level emission was almost undetectable in both undoped and N-doped ZnO films. The growth and doping mechanism of N-doped ZnO films were discussed. (c) 2005 Elsevier B.V. All rights reserved.
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页码：495 / 501
页数：7
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