An Accurate Large-signal SPICE Model For Resonant Tunneling Diode

被引：11
|
作者：
Nafea, Sherif F. [1 ]
Dessouki, Ahmed A. S. [2 ]
机构：
[1] Suez Canal Univ, Dept Elect Engn, Fac Engn, Ismailia, Egypt
[2] Port Said Univ, Dept Elect Engn, Fac Engn, Port Fouad, Egypt
来源：
2010 INTERNATIONAL CONFERENCE ON MICROELECTRONICS | 2010年
关键词：
Resonant Tunneling Diode; SPICE; Negative Differential Resistance;
D O I：
10.1109/ICM.2010.5696201
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Resonant Tunneling Diode (RTD) is a promising device that can be used in the design of ultra-high speed circuits. Also the Negative Differential Resistance (NDR) characteristic of RTD showed a significant reduction in logic circuits' size and complexity. This paper proposes a new accurate and less complexity large signal RTD SPICE model for analyzing circuits containing RTD. In addition, a straightforward parameters extraction routine using MATLAB program is developed. Some important applications are simulated and verified using the new model.
引用
收藏
页码：507 / 510
页数：4
相关论文
共 50 条
  • [31] SPICE model of the resonant-tunnelling diode
    Brown, ER
    McMahon, OB
    Mahoney, LJ
    Molvar, KM
    ELECTRONICS LETTERS, 1996, 32 (10) : 938 - 940
  • [32] Large-signal PIN diode model for ultra-fast photodetectors
    Fritsche, Carsten
    Krozer, Viktor
    35th European Microwave Conference, Vols 1-3, Conference Proceedings, 2005, : 1215 - 1218
  • [33] BARITT-DIODE LARGE-SIGNAL PERFORMANCE
    STEWART, JAC
    ELECTRONICS LETTERS, 1974, 10 (10) : 193 - 194
  • [34] LARGE-SIGNAL PROCESSING AT DIODE RESONANCE CIRCUITS
    KELLERMANN, KJ
    INTERNATIONALE ELEKTRONISCHE RUNDSCHAU, 1973, 27 (08): : 177 - 179
  • [35] An accurate large-signal physical model for microwave GaAs/AlGaAs HBTs
    Henderson, GN
    INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING, 1996, 6 (03): : 153 - 165
  • [36] TUNNEL DIODE LARGE-SIGNAL SIMULATION STUDY
    GELLER, SB
    MANTEK, PA
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (04): : 803 - &
  • [37] Improving large-signal FET/HEMT model accuraccy by optimization of diode response
    Johnson, J
    Branner, GR
    2002 45TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL II, CONFERENCE PROCEEDINGS, 2002, : 641 - 644
  • [38] Averaged large-signal model of quantum series-parallel resonant converter
    Castilla, M
    de Vicuña, LG
    López, O
    López, M
    Matas, J
    ELECTRONICS LETTERS, 1999, 35 (09) : 686 - 687
  • [39] PULSED IV CHARACTERIZATION AND NOISE MEASUREMENTS FOR AN ACCURATE HBT LARGE-SIGNAL MODEL
    DIENOT, JM
    PLANA, R
    GAYRAL, M
    GRAFFEUIL, J
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1994, 7 (02) : 78 - 81
  • [40] EFFECT OF TEMPERATURE ON BARITT DIODE LARGE-SIGNAL PERFORMANCE
    KARASEK, M
    SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1179 - 1181
12345