BARITT-DIODE LARGE-SIGNAL PERFORMANCE

被引：3

作者：

STEWART, JAC ^{[1
]}

机构：

[1] QUEENS UNIV,DEPT ELECT & ELECTR ENGN,BELFAST BT7 1NN,NORTH IRELAND

来源：

关键词：

D O I：

10.1049/el:19740147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：193 / 194

页数：2

共 50 条

[1] EXPERIMENTAL STUDIES ON LARGE-SIGNAL OPERATION OF BARITT-DIODE AMPLIFIERS
OKAZAKI, K
CHANG, NS
MATSUO, Y
[J]. ELECTRONICS & COMMUNICATIONS IN JAPAN, 1975, 58 (05): : 75 - 82
[2] EFFECT OF TEMPERATURE ON BARITT DIODE LARGE-SIGNAL PERFORMANCE
KARASEK, M
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1179 - 1181
[3] LARGE-SIGNAL ANALYSIS OF SILICON PNP-BARITT DIODE
KARASEK, M
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (07) : 625 - 631
[4] OPTIMAL DOPING OF A BARITT-DIODE
PAVLOV, GP
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1981, 24 (07): : 64 - 68
[5] SILICON-CARBIDE BARITT-DIODE
ARUTYUNYAN, VM
BUNIATYAN, VV
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1982, 27 (06): : 1242 - 1243
[6] NATURAL NOISE IN BARITT-DIODE OSCILLATORS
ZAITSEV, VV
YAKIMOV, AV
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1979, 24 (07): : 1367 - 1373
[7] MICROWAVE BARITT DIODES .1. LARGE-SIGNAL PERFORMANCE
HARTH, W
CLAASSEN, M
[J]. NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1973, 26 (01): : 26 - 29
[8] LARGE-SIGNAL ANALYSIS OF SILICON BARITT DIODES
MATSUMURA, M
[J]. NEC RESEARCH & DEVELOPMENT, 1974, (32): : 1 - 11
[9] P+-N-P+ BARITT-DIODE DESIGN
STEWART, JAC
[J]. ELECTRONICS LETTERS, 1975, 11 (19) : 460 - 461
[10] CONVERSION GAIN OF SELF-OSCILLATING BARITT-DIODE MIXERS
HARTH, W
[J]. AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1980, 34 (10): : 426 - 428