A 16nm 128Mb SRAM in High-κ Metal-Gate FinFET Technology with Write-Assist Circuitry for Low-VMIN Applications

被引：0

作者：

Chen, Yen-Huei ^{[1
]}

Chan, Wei-Min ^{[1
]}

Wu, Wei-Cheng ^{[1
]}

Liao, Hung-Jen ^{[1
]}

Pan, Kuo-Hua ^{[1
]}

Liaw, Jhon-Jhy ^{[1
]}

Chung, Tang-Hsuan ^{[1
]}

Li, Quincy ^{[1
]}

Chang, George H. ^{[1
]}

Lin, Chih-Yung ^{[1
]}

Chiang, Mu-Chi ^{[1
]}

Wu, Shien-Yang ^{[1
]}

Natarajan, Sreedhar ^{[1
]}

Chang, Jonathan ^{[1
]}

机构：

[1] TSMC, Hsinchu, Taiwan

来源：

2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC) | 2014年 / 57卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：238 / +

页数：3

共 25 条

[1] A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications
Chen, Yen-Huei
Chan, Wei-Min
Wu, Wei-Cheng
Liao, Hung-Jen
Pan, Kuo-Hua
Liaw, Jhon-Jhy
Chung, Tang-Hsuan
Li, Quincy
Lin, Chih-Yung
Chiang, Mu-Chi
Wu, Shien-Yang
Chang, Jonathan
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (01) : 170 - 177
[2] A 7nm 256Mb SRAM in High-K Metal-Gate FinFET Technology with Write-Assist Circuitry for Low-VMIN Applications
Chang, Jonathan
Chen, Yen-Huei
Chan, Wei-Min
Singh, Sahil Preet
Cheng, Hank
Fujiwara, Hidehiro
Lin, Jih-Yu
Lin, Kao-Cheng
Hung, John
Lee, Robin
Liao, Hung-Jen
Liaw, Jhon-Jhy
Li, Quincy
Lin, Chih-Yung
Chiang, Mu-Chi
Wu, Shien-Yang
2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2017, : 206 - 206
[3] A 20nm 112Mb SRAM in High-κ Metal-Gate with Assist Circuitry for Low-Leakage and Low-VMIN Applications
Chang, Jonathan
Chen, Yen-Huei
Cheng, Hank
Chan, Wei-Min
Liao, Hung-Jen
Li, Quincy
Chang, Stanley
Natarajan, Sreedhar
Lee, Robin
Wang, Ping-Wei
Lin, Shyue-Shyh
Wu, Chung-Cheng
Cheng, Kuan-Lun
Cao, Min
Chang, George H.
2013 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC), 2013, 56 : 316 - U1190
[4] A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications
Chang, Tsung-Yung Jonathan
Chen, Yen-Huei
Chan, Wei-Min
Cheng, Hank
Wang, Po-Sheng
Lin, Yangsyu
Fujiwara, Hidehiro
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Liao, Hung-Jen
Wang, Ping-Wei
Yeap, Geoffrey
Li, Quincy
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (01) : 179 - 187
[5] A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications
Chang, Jonathan
Chen, Yen-Huei
Chan, Gary
Cheng, Hank
Wang, Po-Sheng
Lin, Yangsyu
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Lee, Robin
Liao, Hung-Jen
Wang, Ping-Wei
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2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC), 2020, : 238 - +
[6] A 28-nm 32 Kb SRAM For Low-VMIN Applications Using Write and Read Assist Techniques
Kumar, Satyendra
Saha, Kaushik
Gupta, Hariom
RADIOENGINEERING, 2017, 26 (03) : 772 - 780
[7] A 14 nm FinFET 128 Mb SRAM With VMIN Enhancement Techniques for Low-Power Applications
Song, Taejoong
Rim, Woojin
Jung, Jonghoon
Yang, Giyong
Park, Jaeho
Park, Sunghyun
Kim, Yongho
Baek, Kang-Hyun
Baek, Sanghoon
Oh, Sang-Kyu
Jung, Jinsuk
Kim, Sungbong
Kim, Gyuhong
Kim, Jintae
Lee, Youngkeun
Sim, Sang-Pil
Yoon, Jong Shik
Choi, Kyu-Myung
Won, Hyosig
Park, Jaehong
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (01) : 158 - 169
[8] A 14nm FinFET 128Mb 6T SRAM with VMIN-Enhancement Techniques for Low-Power Applications
Song, Taejoong
Rim, Woojin
Jung, Jonghoon
Yang, Giyong
Park, Jaeho
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Baek, Kang-Hyun
Baek, Sanghoon
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Jung, Jinsuk
Kim, Sungbong
Kim, Gyuhong
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Lee, Youngkeun
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2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC), 2014, 57 : 232 - +
[9] 16 nm FinFET High-k/Metal-gate 256-kbit 6T SRAM macros with Wordline Overdriven Assist
Yabuuchi, Makoto
Morimoto, Masao
Tsukamoto, Yasumasa
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Nii, Koji
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,
[10] A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS Technology With Capacitive Charge-Sharing Write Assist Circuitry
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Conary, James
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