High-power single spatial mode superluminescent diodes at 675 nm

被引：5

作者：

Andreeva, E. V. ^{[1
]}

Anikeev, A. S. ^{[1
]}

Il'chenko, S. N. ^{[1
]}

Chamorovskiy, A. ^{[2
]}

Yakubovich, S. D. ^{[3
]}

机构：

[1] Opton Ltd, Mosfilmovskaya St 17B, Moscow 119330, Russia

[2] Superlum Diodes Ltd, Unit B3, Fota Point Enterprise Pk, Carrigtwohill T45FC93, Cork, Ireland

[3] Moscow State Technol Univ MIREA, Vernadskogo Prosp 78, Moscow 119454, Russia

来源：

ELECTRONICS LETTERS | 2017年 / 53卷 / 23期

关键词：

superluminescent diodes; aluminium compounds; gallium compounds; indium compounds; optimisation; MOCVD; life testing; semiconductor device reliability; semiconductor device testing; AlGaInP-GaInPAs; wavelength; 675; nm; reliability; life time testing; SLD; high-power spatially single-mode superluminescent diode; p-contact deposition technology; active channel formation; MQW heterostructure metal-organic chemical vapour deposition growth; OPTICAL COHERENCE TOMOGRAPHY;

D O I：

10.1049/el.2017.2944

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optimisation of AlGaInP/GaInPAs MQW heterostructure metal-organic chemical vapour deposition growth as well as the improvements of active channel formation and P-contact deposition technologies is shown to enable a significantly increased external differential efficiency up to 0.5 mW/mA and catastrophic optical damage threshold up to 50 mW of spatially single-mode superluminescent diodes (SLDs) at central wavelength of 675 nm. Life time tests demonstrated high reliability of new SLDs at continuous wave output power of up to 30 mW. The dependencies of spectral and power characteristics of these SLDs on active channel dimensions are presented. To the best of knowledge, these are the most powerful and broadband SLDs at 675 nm.

引用

页码：1539 / 1540

页数：2

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