996 nm high-power single-longitudinal-mode tapered gain-coupled distributed feedback laser diodes

被引：10

作者：

Lei, Yuxin ^{[1
,2
]}

Chen, Yongyi ^{[1
]}

Gao, Feng ^{[1
]}

Ma, Dezheng ^{[1
,2
]}

Jia, Peng ^{[1
]}

Wu, Hao ^{[1
]}

Ruan, Chunkao ^{[1
,2
]}

Liang, Lei ^{[1
]}

Chen, Chao ^{[1
]}

Zhang, Jun ^{[1
]}

Qin, Li ^{[1
]}

Ning, Yongqiang ^{[1
]}

Wang, Lijun ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

APPLIED OPTICS | 2019年 / 58卷 / 23期

基金：

中国国家自然科学基金;

关键词：

DFB LASERS; SEMICONDUCTOR-LASER; LINEWIDTH;

D O I：

10.1364/AO.58.006426

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-power single-longitudinal-mode regrowth-free tapered gain-coupled distributed feedback laser diode based on periodic current injection is achieved at 996 nm. It enhances the output power without beam quality degrading. A continuous-wave output power of over 1.12 W is achieved at 3 A. The maximum output power in single-longitudinal-mode operation is up to 0.56 W at 1.4 A. The power conversion efficiency is over 24%, and the slope efficiency is 0.58 W/A. The side mode suppression ratio is over 38 dB; the 3 dB spectral linewidth is less than 2.4 pm. The lateral far-field divergence angle is only 14.98 degrees, and the beam quality factor M-2 is 1.64, achieving a near-diffraction-limit emission. Our device has great potential in commercial applications and the experimental study of high-power near-diffraction-limit laser diodes for its low-cost fabrication technique and narrowband single-longitudinal-mode emission at high power. (C) 2019 Optical Society of America

引用

页码：6426 / 6432

页数：7

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