Multilevel resistance switching phenomena observed in the Cu (Ti)/HfO2/Au device

被引：0
|
作者：
Yoshida, Hayato [1 ]
Shimizu, Tomohiro [1 ]
Ito, Takeshi [1 ]
Shingubara, Shoso [1 ]
机构：
[1] Kansai Univ, Grad Sch Sci & Engn, Suita, Osaka 5648680, Japan
来源：
2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2017年
关键词：
ReRAM; HfO2; Multilevel switching;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Memory devices having multiple resistance states is promising for increase of memory capacity as well as realizing higher functionality. In this study, we studied multiple resistance states appearing in the reset operation mode in the Cu/HfO2/Au and Ti/HfO2/Au ReRAM devices. Both devices showed bipolar resistance switching property. Ti/HfO2/Au device showed multiple resistance states strictly dependent on the amount of reset voltage, on the other hand, resistance of Cu/HfO2/Au device did not show clear dependence on the reset voltage.
引用
收藏
页码：70 / 71
页数：2
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