Raman scattering diagnostics of as grown and pulsed laser modified Ge-Si nanostructures with quantum dots

被引：1
|
作者：
Gatskevich, E. I. [1 ]
Ivlev, G. D. [1 ]
Volodin, V. A. [2 ]
Dvurechenskii, A. V. [2 ]
Efremov, M. D. [2 ]
Nikiforov, A. I. [2 ]
Yakimov, A. I. [2 ]
机构：
[1] Inst Elect NASB, 22 Logoiskii Trakt, Minsk 220090, BELARUS
[2] RAS, Inst Semicond Phys, SB, Novosibirsk 630090, Russia
来源：
ICONO 2007: NOVEL PHOTONICS MATERIALS; OPTICS AND OPTICAL DIAGNOSTICS OF NANOSTRUCTURES | 2007年 / 6728卷
关键词：
Raman spectra; Ge; Si; nanostructure; ruby laser; nanopulsed irradiation;
D O I：
10.1117/12.752381
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The investigation of nanosecond ruby laser impact on Ge/Si heterostructures with GexSi1-x quantum dots (QD's) has been carried out. Both energy density in pulse and number of pulses changed. Raman spectroscopy was used to study the nanocluster states before and after laser irradiation. The method for control of composition and strain in Ge-Si based quantum dots was essentially improved.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Raman study of Si-Ge intermixing in Ge quantum rings and dots
    Mashanov, VI
    Cheng, HH
    Chia, CT
    Chang, YH
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 28 (04): : 531 - 536
  • [42] Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots
    Talochkin, A. B.
    Cherkov, A. G.
    NANOTECHNOLOGY, 2009, 20 (34)
  • [43] Raman E0 resonance of Ge quantum dots in Si/Ge/Si structures
    Talochkin, AB
    Efanov, AV
    Markov, VA
    Nikiforov, AI
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1999, 63 (02): : 290 - 298
  • [44] Raman scattering of InSb quantum dots grown on InP substrates
    Armelles, G
    Utzmeier, T
    Postigo, PA
    Briones, F
    Ferrer, JC
    Peiro, P
    Cornet, A
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) : 6339 - 6342
  • [45] Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
    Bougeard, D
    Tan, PH
    Sabathil, M
    Vogl, P
    Abstreiter, G
    Brunner, K
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 312 - 316
  • [46] Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
    Bougeard, D. (bougeard@wsi.tum.de), 1600, (Elsevier):
  • [47] A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots
    Kolobov, AV
    Morita, K
    Itoh, KM
    Haller, EE
    APPLIED PHYSICS LETTERS, 2002, 81 (20) : 3855 - 3857
  • [48] Raman study of Ge quantum dots formed by submonolayer Ge coverages in Ge/Si superlattices
    Volodin, VA
    Orehov, DA
    Efremov, MD
    Sachkov, VA
    Kolesov, BA
    Zakharov, ND
    Egorov, VA
    Cirlin, GE
    Werner, P
    10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2003, 5023 : 161 - 164
  • [49] INPLANE RAMAN-SCATTERING OF [001]-GROWN SI/GE SUPERLATTICES
    SCHORER, R
    WEGSCHEIDER, W
    EBERL, K
    KASPER, E
    KIBBEL, H
    ABSTREITER, G
    THIN SOLID FILMS, 1992, 222 (1-2) : 269 - 273
  • [50] Growth of Ge quantum dots on Si(100)-(2x1) by pulsed laser deposition
    Hegazy, MS
    Elsayed-Ali, HE
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (05)
12345