Interfacial investigation of in situ oxidation of 4H-SiC

被引：63
|
作者：
Virojanadara, C [1 ]
Johansson, LI [1 ]
机构：
[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
来源：
SURFACE SCIENCE | 2001年 / 472卷 / 1-2期
关键词：
semi-conductor-insulator interfaces; silicon carbide; oxidation; silicon oxides;
D O I：
10.1016/S0039-6028(00)00967-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An in situ oxidation study of root3 x root3 R30 degrees reconstructed 4H-SiC(0001) surfaces is reported. An intermediate oxidation state (interpreted to be Si+1) is revealed in core level photoemission spectra recorded from the in situ prepared SiO2/4H-SiC samples. Oxidation was made at a pressure of similar to 10(-3) Torr in flowing oxygen and at substrate temperatures from 600 degreesC to 950 degreesC. The highest oxidation rate was obtained at 800 degreesC when approximate to 25 Angstrom thick SiO2 layers were prepared. The surface related C 1s components observed on the clean reconstructed 4H-SiC(0001) surfaces were found to disappear after oxidation. No carbon or carbon containing by-product at the interface or in the oxide were possible to observe for the films grown. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L145 / L149
页数：5
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