Oxidation process by RTP for 4H-SiC MOSFET gate fabrication

被引：4
|
作者：
Constant, A. [1 ,2 ]
Camara, N. [1 ,2 ]
Montserrat, J. [1 ]
Pauses, E. [1 ]
Camassel, J. [2 ]
Godignon, P. [1 ]
机构：
[1] IMB CNM, CSIC, Campus UAB, Barcelona 08193, Spain
[2] GES, UMR CNRS 5650, F-34095 Montpellier, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷
关键词：
MOSFET; oxidation; nitridation; RTP; N2O; H-2 surface pre-treatment; THRESHOLD-VOLTAGE INSTABILITY; ELECTRON-MOBILITY; INTERFACE; NO;
D O I：
10.4028/www.scientific.net/MSF.679-680.500
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Rapid Thermal Processing (RTP) has been evaluated as an alternative to the conventional furnace process for the gate oxide formation of SiC lateral MOSFETs. We show that this innovative oxidation method has not only the advantage to significantly reduce the thermal budget compared to classical oxidation, but also produces a significant improvement of MOSFET performance when using N2O as oxidizing gas. Studying different surface preparation before gate oxidation, we demonstrate that in-situ surface preparation by H-2 annealing increases considerably the channel mobility and also the electrical stability with respect to constant bias stress at low-field.
引用
收藏
页码：500 / +
页数：2
相关论文
共 50 条
  • [1] 4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C
    Naik, Harsh
    Chow, T. Paul
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 607 - 610
  • [2] Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
    Poggi, A.
    Moscatelli, F.
    Solmi, S.
    Nipoti, R.
    Tamarri, F.
    Pizzochero, G.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 761 - 764
  • [3] Thin PSG Process for 4H-SiC MOSFET
    Sharma, Y. K.
    Ahyi, A. C.
    Issacs-Smith, T.
    Modic, A.
    Xu, Y.
    Garfunkel, E.
    Jennings, M. R.
    Fisher, C.
    Thomas, S. M.
    Mawby, P.
    Dhar, S.
    Feldman, L. C.
    Williams, J. R.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 513 - +
  • [4] Design and fabrication of a 3.3 kV 4H-SiC MOSFET
    黄润华
    陶永洪
    柏松
    陈刚
    汪玲
    刘奥
    卫能
    李赟
    赵志飞
    [J]. Journal of Semiconductors, 2015, (09) : 58 - 61
  • [5] Design and fabrication of a 3.3 kV 4H-SiC MOSFET
    Huang Runhua
    Tao Yonghong
    Bai Song
    Chen Gang
    Wang Ling
    Liu Ao
    Wei Neng
    Li Yun
    Zhao Zhifei
    [J]. JOURNAL OF SEMICONDUCTORS, 2015, 36 (09)
  • [6] Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
    Furuhashi, Masayuki
    Tanioka, Toshikazu
    Imaizumi, Masayuki
    Miura, Naruhisa
    Yamakawa, Satoshi
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 985 - 988
  • [7] 4H-SiC Trench-gate MOSFET with JTE termination
    Zhu, Zhengyun
    Ren, Na
    Xu, Hongyi
    Liu, Li
    Sheng, Kuang
    [J]. 2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS, 2022, : 4 - 7
  • [8] 4H-SiC Trench MOSFET With L-Shaped Gate
    Song, Qingwen
    Yang, Shuai
    Tang, Guannan
    Han, Chao
    Zhang, Yimeng
    Tang, Xiaoyan
    Zhang, Yimen
    Zhang, Yuming
    [J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (04) : 463 - 466
  • [9] Normally-off 4H-SiC Power MOSFET with Submicron Gate
    Yamashita, Kenya
    Egashira, Kyoko
    Hashimoto, Koichi
    Takahashi, Kunimasa
    Kusumoto, Osamu
    Utsunomiya, Kazuya
    Hayashi, Masashi
    Uchida, Masao
    Kudo, Chiaki
    Kitabatake, Makoto
    Hashimoto, Shin
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1115 - 1118
  • [10] High Mobility 4H-SiC MOSFET
    O'Neill, A.
    Arith, F.
    Urresti, J.
    Vasilevskiy, K.
    Wright, N.
    Olsen, S.
    [J]. 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 523 - 526
12345