Thin PSG Process for 4H-SiC MOSFET

被引：1

作者：

Sharma, Y. K. ^{[1
]}

Ahyi, A. C. ^{[2
]}

Issacs-Smith, T. ^{[2
]}

Modic, A. ^{[2
]}

Xu, Y. ^{[3
]}

Garfunkel, E. ^{[3
]}

Jennings, M. R. ^{[1
]}

Fisher, C. ^{[1
]}

Thomas, S. M. ^{[1
]}

Mawby, P. ^{[1
]}

Dhar, S. ^{[2
]}

Feldman, L. C. ^{[4
]}

Williams, J. R. ^{[2
]}

机构：

[1] Univ Warwick, Coventry CV4 7AL, W Midlands, England

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA

[4] Rutgers State Univ, IAMDN, Piscataway, NJ 08854 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

Bias-temperature stress; interface traps; channel mobility; phosphosilicate glass; threshold voltage stability; SILICON-CARBIDE; INTERFACE; PASSIVATION;

D O I：

10.4028/www.scientific.net/MSF.778-780.513

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The use of phosphorous as a passivating agent for the SiO2/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm(2)/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP2O7 planar diffusion source is used to produce P2O5 for the passivation of the interface. Incorporation of phosphorous into SiO2 leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm(2)/V.s.

引用

页码：513 / +

页数：2

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