Raman scattering from the filled tetrahedral semiconductor LiMgAs

被引:0
|
作者
Kuriyama, K. [1 ]
Yamashita, Y. [1 ]
Suzuki, Y. [1 ]
Matsumoto, K. [1 ]
Kushida, K. [2 ]
机构
[1] Hosei Univ, Coll Engn, Tokyo 1848584, Japan
[2] Osaka Kyoiku Univ, Dept Arts & Sci, Osaka 5828582, Japan
来源
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词
Wide gap semiconductors; Raman-scattering; Bonding character; Photo-luminescence;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ordered LiMgAs (space group: F-43m), viewed theoretically as a zinc-blende-AlAs-like (MgAs)(-) lattice partially filled with He-like Li+ interstitials, is studied using a Raman-scattering method. The band gap of as-grown crystals is found to be 2.309 eV with a direct gap from the photoluminescence measurements at 20 K, in consistency with that estimated by the optical absorption. From Raman scattering, two LO and TO phonons at k similar to 0 for Li-As and Mg-As pair are found to be 656 and 638 cm(-1) and 329 and 307 cm(-1), respectively, indicating that LiMgAs crystallizes with the ordered Li and Mg atoms at their tetrahedral sites. These results confirm a prediction that the ordered LiMgAs is attributed to the low ionic character of both Li-As (Pauling's ionicity f(i)=0.22) and Mg-As (f(i)=0.15) bonds.
引用
收藏
页码:67 / +
页数:2
相关论文
共 50 条
  • [41] Absorption and Raman scattering spectroscopies from semiconductor-glass composites
    Bukowski, TJ
    Neidt, TM
    Ochoa, R
    Sinmons, JH
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 274 (1-3) : 87 - 92
  • [42] Electronic structures of the filled tetrahedral semiconductor LiMgN with a zincblende-type structure
    Li, HP
    Hou, ZF
    Huang, MC
    Zhu, ZZ
    CHINESE PHYSICS LETTERS, 2003, 20 (01): : 114 - 116
  • [43] Theoretical prediction of the elastic, electronic and optical properties of the filled tetrahedral semiconductor α-LiMgSb
    Bouhemadou, A.
    Khenata, R.
    Rached, D.
    Amrani, B.
    COMPUTATIONAL MATERIALS SCIENCE, 2010, 49 (01) : 64 - 69
  • [44] Electronic, elastic and dynamic properties of the filled tetrahedral semiconductor LiMgN under pressures
    Wu, H. Y.
    Chen, Y. H.
    Deng, C. R.
    Han, X. Y.
    Liu, Z. J.
    JOURNAL OF SOLID STATE CHEMISTRY, 2015, 231 : 1 - 6
  • [45] Electronic structures of the filled tetrahedral semiconductor Li3AlN2
    Ma, CL
    Pan, T
    CHINESE PHYSICS LETTERS, 2006, 23 (01) : 186 - 188
  • [46] Band gap of the filled-tetrahedral semiconductor LiMgP evaluated by photoacoustic spectroscopy
    Kushida, Kazumasa
    Kuriyama, Kazuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) : 77 - 78
  • [47] RESONANT RAMAN-SCATTERING IN A SEMICONDUCTOR SUPERLATTICE
    MANUEL, P
    SAIHALASZ, GA
    CHANG, LL
    CHANG, CA
    ESAKI, L
    PHYSICAL REVIEW LETTERS, 1976, 37 (25) : 1701 - 1704
  • [48] Raman scattering as a diagnostic tool of semiconductor nanofabrication
    Torres, CMS
    OPTICAL SPECTROSCOPY OF LOW DIMENSIONAL SEMICONDUCTORS, 1997, 344 : 331 - 354
  • [49] Electron Raman scattering in semiconductor quantum well
    Betancourt-Riera, R
    Riera, R
    Rosas, R
    Marín, JL
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2003, 1-2 : 125 - 142
  • [50] Investigation of semiconductor nanocrystals by the Raman scattering.
    Melnik, NN
    Zavaritskaya, TN
    Rzaev, MM
    Karavanski, VA
    Alekseev, VA
    RAMAN SCATTERING, 2000, 4069 : 212 - 216