Raman scattering from the filled tetrahedral semiconductor LiMgAs

被引:0
|
作者
Kuriyama, K. [1 ]
Yamashita, Y. [1 ]
Suzuki, Y. [1 ]
Matsumoto, K. [1 ]
Kushida, K. [2 ]
机构
[1] Hosei Univ, Coll Engn, Tokyo 1848584, Japan
[2] Osaka Kyoiku Univ, Dept Arts & Sci, Osaka 5828582, Japan
来源
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词
Wide gap semiconductors; Raman-scattering; Bonding character; Photo-luminescence;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ordered LiMgAs (space group: F-43m), viewed theoretically as a zinc-blende-AlAs-like (MgAs)(-) lattice partially filled with He-like Li+ interstitials, is studied using a Raman-scattering method. The band gap of as-grown crystals is found to be 2.309 eV with a direct gap from the photoluminescence measurements at 20 K, in consistency with that estimated by the optical absorption. From Raman scattering, two LO and TO phonons at k similar to 0 for Li-As and Mg-As pair are found to be 656 and 638 cm(-1) and 329 and 307 cm(-1), respectively, indicating that LiMgAs crystallizes with the ordered Li and Mg atoms at their tetrahedral sites. These results confirm a prediction that the ordered LiMgAs is attributed to the low ionic character of both Li-As (Pauling's ionicity f(i)=0.22) and Mg-As (f(i)=0.15) bonds.
引用
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页码:67 / +
页数:2
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