All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates

被引：205

作者：

Lee, Seoung-Ki ^{[1
,2
,3
]}

Jang, Ho Young ^{[4
,5
]}

Jang, Sukjae ^{[1
,2
,3
]}

Choi, Euiyoung ^{[1
]}

Hong, Byung Hee ^{[6
]}

Lee, Jaichan ^{[1
]}

Park, Sungho ^{[4
,5
]}

Ahn, Jong-Hyun ^{[1
,2
,3
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Ctr Human Interface Nano Technol HINT, Suwon 440746, South Korea

[4] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea

[5] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[6] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea

来源：

NANO LETTERS | 2012年 / 12卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Graphene; graphene oxide; flexible electronics; thin film transistor; OXIDE; TRANSPARENT; HYSTERESIS; REDUCTION; STRENGTH; WATER;

D O I：

10.1021/nl300948c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GC) dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 x 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm(2)/(V.s), respectively, at a drain bias of -0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.

引用

页码：3472 / 3476

页数：5

共 50 条

[41] Mechanics of thin-film transistors and solar cells on flexible substrates
Gleskova, Helena
Cheng, I-Chun
Wagner, Sigurd
Sturm, James C.
Suo, Zhigang
SOLAR ENERGY, 2006, 80 (06) : 687 - 693
[42] Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature
Han, Dedong
Wang, Wei
Cai, Jian
Wang, Liangliang
Ren, Yicheng
Wang, Yi
Zhang, Shengdong
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (07) : 5154 - 5157
[43] All-polymer thin film transistors on patterned elastomeric substrates
Kang, Hyewon
Kim, Tae-il
Han, Keon-kook
Lee, Hong H.
ORGANIC ELECTRONICS, 2009, 10 (03) : 527 - 531
[44] High-Frequency Rectifiers Based on Organic Thin-Film Transistors on Flexible Substrates
Ibrahim, Ghada H.
Zschieschang, Ute
Klauk, Hagen
Reindl, Leonhard
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (06) : 2365 - 2371
[45] Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
Li, Haoyu U.
Jackson, Thomas N.
2016 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (WMED), 2016, : 19 - 22
[46] Oxide Semiconductor Thin Film Transistors on Thin Solution-Cast Flexible Substrates
Li, Haoyu U.
Jackson, Thomas N.
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (01) : 35 - 37
[47] Alcohol Recognition by Flexible, Transparent and Highly Sensitive Graphene-Based Thin-Film Sensors
Xuezhu Xu
Jian Zhou
Yangyang Xin
Gilles Lubineau
Qian Ma
Long Jiang
Scientific Reports, 7
[48] Alcohol Recognition by Flexible, Transparent and Highly Sensitive Graphene-Based Thin-Film Sensors
Xu, Xuezhu
Zhou, Jian
Xin, Yangyang
Lubineau, Gilles
Ma, Qian
Jiang, Long
SCIENTIFIC REPORTS, 2017, 7
[49] Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates
Cazalas, E.
Hogsed, M. R.
Vangala, S.
Snure, M. R.
McClory, J. W.
APPLIED PHYSICS LETTERS, 2019, 115 (22)
[50] High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates
Ahn, Jong-Hyun
Kim, Hoon-Sik
Lee, Keon Jae
Zhu, Zhengtao
Menard, Etienne
Nuzzo, Ralph G.
Rogers, John A.
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (06) : 460 - 462

← 1 2 3 4 5 →