All-polymer thin film transistors on patterned elastomeric substrates

A patterned soft elastomeric substrate is utilized for fabricating an all-polymer thin film transistor (TFT). With a polymer solution for the source/drain electrodes, it is difficult to form a well defined narrow channel. The problem is resolved with the aid of a micromolding technique and the patterned substrate. When the all polymer TFT is subjected to bending, the polymer gate dielectric is the layer that experiences the most stress. This stress problem, which can lead to device failure, can be relieved to an extent by introducing a small fraction of ethyl cellulose to the polymer dielectric. The effects of the ethyl cellulose content on the device performance are not significant. (C) 2009 Elsevier B.V. All rights reserved.