New Ge-Me and Si-Me thin film compositions for high-temperature thermal converter construction

被引：0
|
作者：
Beensh-Marchwicka, G [1 ]
Prociów, E [1 ]
Osadnik, S [1 ]
机构：
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
来源：
26TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY, CONFERENCE PROCEEDINGS: INTEGRATED MANAGEMENT OF ELECTRONIC MATERIALS PRODUCTION | 2003年
关键词：
D O I：
10.1109/ISSE.2003.1260476
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The applicability of some thin films based on Ge-Me and Si-Me compositions in the thermal converter construction for high-temperature range has been investigated All films were deposited by d.c. pulse magnetron sputtering. Testing converters contained the integrated thermopile with linear symmetry based on p-type Ge(Sb, V) and TiSi2 material combination and the heater built up using MeSi2 (Me:Mo, V, W, Ta, Ti) compositions with TCR varying from 0 to -1500 ppm/K. This choice permits to control the uniformity of distribution of temperature field. Various material combinations have been evaluated with the respect to the performance characteristics of thermal converters.
引用
收藏
页码：22 / 25
页数：4
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