New Ge-Me and Si-Me thin film compositions for high-temperature thermal converter construction

被引：0

作者：

Beensh-Marchwicka, G ^{[1
]}

Prociów, E ^{[1
]}

Osadnik, S ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

26TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY, CONFERENCE PROCEEDINGS: INTEGRATED MANAGEMENT OF ELECTRONIC MATERIALS PRODUCTION | 2003年

关键词：

D O I：

10.1109/ISSE.2003.1260476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The applicability of some thin films based on Ge-Me and Si-Me compositions in the thermal converter construction for high-temperature range has been investigated All films were deposited by d.c. pulse magnetron sputtering. Testing converters contained the integrated thermopile with linear symmetry based on p-type Ge(Sb, V) and TiSi2 material combination and the heater built up using MeSi2 (Me:Mo, V, W, Ta, Ti) compositions with TCR varying from 0 to -1500 ppm/K. This choice permits to control the uniformity of distribution of temperature field. Various material combinations have been evaluated with the respect to the performance characteristics of thermal converters.

引用

页码：22 / 25

页数：4

共 44 条

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