As-grown Ge pin Photodiodes on Si with Low Dark Current Achieved by Hydrogen Desorption Technique

被引：0

作者：

Takada, Yoichi ^{[1
]}

Suzuki, Ryota ^{[1
]}

Park, Sungbong ^{[1
]}

Osaka, Jiro ^{[1
]}

Ishikawa, Yasuhiko ^{[1
]}

Wada, Kazumi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As-grown Ge pin photodiodes on Si with a low dark current (4.6 x 10-2 A/cm(2) at -1 V) are achieved using a hydrogen desorption technique. This technique should enable the use of Ge in the CMOS backend process.

引用

页码：266 / 268

页数：3

共 31 条

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