Analysis of dark current in Ge-on-Si photodiodes at cryogenic temperatures

被引：0
|
作者：
Pizzone, Andrea [1 ]
Srinivasan, Srinivasan Ashwyn [1 ]
Verheyen, Peter [1 ]
Lepage, Guy [1 ]
Balakrishnan, Sadhishkumar [1 ]
Van Campenhout, Joris [1 ]
机构：
[1] Imec, Leuven, Belgium
来源：
2020 IEEE PHOTONICS CONFERENCE (IPC) | 2020年
关键词：
photodiode; dark current; activation energy; Germanium-on-Silicon;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dark current behavior of three different Ge waveguide photodiode designs integrated in a silicon photonics platform is investigated from 34 to 334 K. The activation energy is extracted to understand the relative contribution of Shockley-Read-Hall and trap-assisted tunneling at different temperatures and voltage biases.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] Characterization of dark current in Ge-on-Si photodiodes
    DiLello, N. A.
    Johnstone, D. K.
    Hoyt, J. L.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (05)
  • [2] Engineering Low Dark Current Density for Ge-on-Si Photodiodes
    Postelnicu, Eveline
    Marzen, Stephanie
    Wen, Ruitao
    Ma, Danhao
    Wang, Baoming
    Wada, Kazumi
    Michel, Jurgen
    Kimerling, Lionel
    2021 IEEE 17TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2021), 2021,
  • [3] Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure
    Wanitzek, Maurice
    Hacka, Michael
    Ramachandra, Harishnarayan
    Seide, Lukas
    Schwarza, Daniel
    Schulze, Jorg
    Oehme, Michael
    METAMATERIALS, METADEVICES, AND METASYSTEMS 2024, 2024, 13109
  • [4] Cryogenic Ge-on-Si avalanche photodiodes operating at 1550 nm wavelength
    Liu, Xiaofei
    Liu, Jingchuan
    He, Funan
    Ma, Ruyuan
    Zhao, Xingyan
    Zhong, Qize
    Dong, Yuan
    Hu, Ting
    2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC, 2024,
  • [5] Broadband PureB Ge-on-Si Photodiodes
    Nanver, Lis K.
    Hassan, Vinayak V.
    Attariabad, Asma
    Rosson, Nicholas
    Arena, Chantal J.
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (06) : 1040 - 1043
  • [6] Ge-on-Si Avalanche Photodiodes for LIDAR Applications
    Wanitzek, M.
    Oehme, M.
    Schwarz, D.
    Guguieva, K.
    Schulze, J.
    2020 43RD INTERNATIONAL CONVENTION ON INFORMATION, COMMUNICATION AND ELECTRONIC TECHNOLOGY (MIPRO 2020), 2020, : 8 - 12
  • [7] Improvement of Ge-on-Si photodiodes by black silicon light trapping
    Steglich, Martin
    Zilk, Matthias
    Schrempel, Frank
    Tuennermann, Andreas
    Kley, Ernst-Bernhard
    APPLIED PHYSICS LETTERS, 2013, 102 (11)
  • [8] Fabrication of PureGaB Ge-on-Si photodiodes for well-controlled 100-pA-level dark currents
    Sammak, A.
    Aminian, M.
    Qi, L.
    de Boer, W. B.
    Charbon, E.
    Nanver, L. K.
    SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64 (06): : 737 - 745
  • [9] Ultralow dark current Ge/Si(100) photodiodes with low thermal budget
    Osmond, J.
    Isella, G.
    Chrastina, D.
    Kaufmann, R.
    Acciarri, M.
    von Kaenel, H.
    APPLIED PHYSICS LETTERS, 2009, 94 (20)
  • [10] Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth
    Jutzi, M
    Berroth, M
    Wöhl, G
    Oehme, M
    Kasper, E
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (07) : 1510 - 1512
12345