Analysis of dark current in Ge-on-Si photodiodes at cryogenic temperatures

被引：0

作者：

Pizzone, Andrea ^{[1
]}

Srinivasan, Srinivasan Ashwyn ^{[1
]}

Verheyen, Peter ^{[1
]}

Lepage, Guy ^{[1
]}

Balakrishnan, Sadhishkumar ^{[1
]}

Van Campenhout, Joris ^{[1
]}

机构：

[1] Imec, Leuven, Belgium

来源：

2020 IEEE PHOTONICS CONFERENCE (IPC) | 2020年

关键词：

photodiode; dark current; activation energy; Germanium-on-Silicon;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dark current behavior of three different Ge waveguide photodiode designs integrated in a silicon photonics platform is investigated from 34 to 334 K. The activation energy is extracted to understand the relative contribution of Shockley-Read-Hall and trap-assisted tunneling at different temperatures and voltage biases.

引用

页数：2

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