Inhibition of exciton formation in iron doped InGaAs/InP multiple quantum wells

被引：0
|
作者：
Guezo, M [1 ]
Loualiche, S [1 ]
Even, J [1 ]
LeCorre, A [1 ]
Dehaese, O [1 ]
Labbe, C [1 ]
机构：
[1] INSA Rennes, LENS, F-35043 Rennes, France
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Saturable absorber based on GaInAS/InP multi-quantum well structures are studied. Iron doping is used to control their absorption recovery time from ns down to sub ps regime reaching a record value of 0.29 ps. However at high doping level (10(19) cm(-3)) and sub ps regime, the non-linear amplitude variation is reduced by Fe-exciton interaction.
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页码：987 / 988
页数：2
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