Inhibition of exciton formation in iron doped InGaAs/InP multiple quantum wells

被引：0

作者：

Guezo, M ^{[1
]}

Loualiche, S ^{[1
]}

Even, J ^{[1
]}

LeCorre, A ^{[1
]}

Dehaese, O ^{[1
]}

Labbe, C ^{[1
]}

机构：

[1] INSA Rennes, LENS, F-35043 Rennes, France

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Saturable absorber based on GaInAS/InP multi-quantum well structures are studied. Iron doping is used to control their absorption recovery time from ns down to sub ps regime reaching a record value of 0.29 ps. However at high doping level (10(19) cm(-3)) and sub ps regime, the non-linear amplitude variation is reduced by Fe-exciton interaction.

引用

页码：987 / 988

页数：2

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