Performance enhancement of CdS/TiO2/FTO photoanode by Ni-doping for quantum dots sensitized solar cells

被引：6
|
作者：
Veerathangam, K. [1 ,2 ]
Shkir, Mohd [3 ,4 ]
Sundhar, A. [5 ]
Pandian, Muthu Senthil [1 ]
Ramasamy, P. [1 ]
机构：
[1] SSN Coll Engn, SSN Res Ctr, Chennai 603110, Tamil Nadu, India
[2] Abi & Abi Coll Arts Sci & Technol, Thanjavur 613003, Tamil Nadu, India
[3] King Khalid Univ, Coll Sci, Dept Phys, Adv Funct Mat & Optoelect Lab AFMOL, Abha 61413, Saudi Arabia
[4] Glocal Univ, Sch Sci & Technol, Saharanpur 247001, Uttar Pradesh, India
[5] Perunthalaivar Kamarajar Inst Engn & Technol, Dept ECE, Karaikal 609603, India
来源：
MATERIALS LETTERS | 2022年 / 307卷
关键词：
Solar energy materials; Semiconductors; Series resistance; Current density; Photoanode; PHOTOVOLTAIC PERFORMANCE;
D O I：
10.1016/j.matlet.2021.130991
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CdS quantum dots (QDs) and Ni-doped CdS QDs sensitized photoanodes were deposited over TiO2/FTO substrate by successive ionic layer adsorption and reaction (SILAR) method. The photoanodes were studied systematically; the results confirmed the anchoring of CdS or Ni-doped CdS over the spin-coated TiO2/FTO substrate. Among various photoanode solar cell assembles, 4% Ni concentration was found to be optimum due to better optical and photovoltaic property. The 4% Ni-doped CdS QDs maximum adsorption range is 550 nm with enhanced absorbance. It leads to enhancement in the cell efficiency from 0.53% to 1.67%.
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收藏
页数：5
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