Performance enhancement of CdS/TiO2/FTO photoanode by Ni-doping for quantum dots sensitized solar cells

被引：6

作者：

Veerathangam, K. ^{[1
,2
]}

Shkir, Mohd ^{[3
,4
]}

Sundhar, A. ^{[5
]}

Pandian, Muthu Senthil ^{[1
]}

Ramasamy, P. ^{[1
]}

机构：

[1] SSN Coll Engn, SSN Res Ctr, Chennai 603110, Tamil Nadu, India

[2] Abi & Abi Coll Arts Sci & Technol, Thanjavur 613003, Tamil Nadu, India

[3] King Khalid Univ, Coll Sci, Dept Phys, Adv Funct Mat & Optoelect Lab AFMOL, Abha 61413, Saudi Arabia

[4] Glocal Univ, Sch Sci & Technol, Saharanpur 247001, Uttar Pradesh, India

[5] Perunthalaivar Kamarajar Inst Engn & Technol, Dept ECE, Karaikal 609603, India

来源：

MATERIALS LETTERS | 2022年 / 307卷

关键词：

Solar energy materials; Semiconductors; Series resistance; Current density; Photoanode; PHOTOVOLTAIC PERFORMANCE;

D O I：

10.1016/j.matlet.2021.130991

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdS quantum dots (QDs) and Ni-doped CdS QDs sensitized photoanodes were deposited over TiO2/FTO substrate by successive ionic layer adsorption and reaction (SILAR) method. The photoanodes were studied systematically; the results confirmed the anchoring of CdS or Ni-doped CdS over the spin-coated TiO2/FTO substrate. Among various photoanode solar cell assembles, 4% Ni concentration was found to be optimum due to better optical and photovoltaic property. The 4% Ni-doped CdS QDs maximum adsorption range is 550 nm with enhanced absorbance. It leads to enhancement in the cell efficiency from 0.53% to 1.67%.

引用

页数：5

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