Growth rate and its limiting process for metalorganic vapor phase epitaxial InN

被引：0

作者：

Adachi, M ^{[1
]}

Murakami, Y ^{[1
]}

Hashimoto, A ^{[1
]}

Yamamoto, A ^{[1
]}

机构：

[1] Fukui Univ, Fac Engn, Dept Elect & Elect Engn, Fukui 9108507, Japan

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

InN; MOVPE; growth rate; NH3; decomposition; limiting process;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth rate as a function of growth temperature has been studied for MOVPE InN. In the temperature range of 500-600 degreesC, growth rate is increased with increasing growth temperature while TMI supply is constant, and shows a saturation against the increase in TMI supply. At 650 degreesC, on the other hand, such a saturation is not seen for TMI supply up to 28 mu mol/min. As a result of this, a growth rate as high as 0.8 mum/h is obtained at 650(.)degreesC Activation energy (similar to0.76 eV) for saturated growth rate is in good agreement with that (0.79 eV) reported for the thermal decomposition of NH, showing that the growth-rate is dominated by the active nitrogen supply and its saturation is due to the deficiency of active nitrogen. At around 650 degreesC, growth rate is lower than that expected from the values at lower temperatures. This seems to be due to the decomposition of grown InN.

引用

页码：339 / 342

页数：4

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