Metalorganic vapor phase epitaxial growth of GaNAs using tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy)

被引：0
|
作者：
Moto, Akihiro [1 ]
Tanaka, So [1 ]
Ikoma, Nobuyuki [2 ]
Tanabe, Tatsuya [1 ]
Takagishi, Shigenori [1 ]
Takahashi, Mitsuo [2 ]
Katsuyama, Tsukuru [2 ]
机构：
[1] Basic High-Technology Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
[2] Optoelectronics R and D Laboratories, Sumitomo Electric Industries, Ltd., I Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 2 B期
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摘要：
Semiconducting gallium arsenide
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页码：1015 / 1018
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