Metalorganic vapor phase epitaxial growth of GaNAs using tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy)

被引：0

作者：

Moto, Akihiro ^{[1
]}

Tanaka, So ^{[1
]}

Ikoma, Nobuyuki ^{[2
]}

Tanabe, Tatsuya ^{[1
]}

Takagishi, Shigenori ^{[1
]}

Takahashi, Mitsuo ^{[2
]}

Katsuyama, Tsukuru ^{[2
]}

机构：

[1] Basic High-Technology Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan

[2] Optoelectronics R and D Laboratories, Sumitomo Electric Industries, Ltd., I Taya-cho, Sakae-ku, Yokohama 244-8588, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 2 B期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Semiconducting gallium arsenide

引用

页码：1015 / 1018

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