Interface trap generation in MOS transistors at high current densities

被引：1
|
作者：
Neugroschel, A [1 ]
Sah, CT [1 ]
Cao, W [1 ]
机构：
[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 19期
关键词：
D O I：
10.1049/el:19981312
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new interface trap generation pathway is demonstrated in MOS transistors; The pathway is due to the electrical activation or dehydrogenation of the electronic traps at the SiO2/Si interface via chemical reduction by atomic hydrogen released From the interconnect during high-current density low-voltage stress.
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页码：1889 / 1891
页数：3
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