Manipulation of Interface Trap-Induced Generation Current by Substrate Bias in MOSFET

被引：2
|
作者：
Chen, Haifeng [1 ]
Xie, Duan [1 ]
Guo, Lixin [1 ]
机构：
[1] Xian Univ Posts & Telecommun, Sch Elect Engn, Xian 710121, Shaanxi, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Interface trap; generation current; substrate bias; MOSFET;
D O I：
10.1109/LED.2018.2845916
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The interface trap-induced generation current I-ge in MOSFET is very weak and hard to control. In this letter, we report the anomalous variations of I-ge under the influence of substratebias V-b in MOSFET. A physical mechanism behind of these experiments is proposed for manipulating the I-ge curve by V-b. Based on this mechanism, the shift, compression, and stretch of I-ge curve can be realized.
引用
收藏
页码：1126 / 1128
页数：3
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