Over 40 Gbit/s 16:1 multiplexer IC using InP/InGaAs HBT technology

被引：9
|
作者：
Ishii, K [1 ]
Nakajima, H [1 ]
Nosaka, H [1 ]
Ida, M [1 ]
Kurishima, K [1 ]
Yamahata, S [1 ]
Enoki, T [1 ]
Shibata, T [1 ]
机构：
[1] NTT Corp, NTT Phootn Labs, Atsugi, Kanagawa 2430198, Japan
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 12期
关键词：
D O I：
10.1049/el:20030596
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-power 16:1 multiplexer (MUX) IC using undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been successfully designed and fabricated. To minimise power consumption, the collector current density of each HBT was optimised taking into account the required operating speed and the number of fan-outs. Up to 47 Gbit/s error-free operation was confirmed with low power consumption of about 3.2 W These results demonstrate that InP/InGaAs HBT technology is attractive for fabricating over 40 Gbit/s, low-power medium-scale-integration (MSI) circuits.
引用
收藏
页码：911 / 913
页数：3
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