Efficient Full-wave Modeling of High Density TSVs for 3D Integration

被引:10
|
作者
Gu, Xiaoxiong [1 ]
Wu, Boping [2 ]
Ritter, Mark [1 ]
Tsang, Leung [2 ]
机构
[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Univ Washington, Seattle, WA 98195 USA
关键词
VIAS;
D O I
10.1109/ECTC.2010.5490794
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a full-wave electromagnetic approach for modeling the electrical performance of massively-coupled and coated through silicon vias in a sandwiched SiO2-Si-SiO2 substrate. The planar guided wave is analyzed to determine the fundamental mode and high order modes in stratified media. Cylindrical wave expansions and Foldy-Lax equations for multiple scattering techniques are used to efficiently calculate the couplings among the vias. The effect of SiO2 coating around the via is modeled by general T-matrix coefficients. Both silicon loss and copper loss are included in this approach. Numerical simulations of insertion loss, return loss and crosstalk of 1-by-3 and 4-by-4 through silicon via arrays are presented and compared with general-purpose field-solver.
引用
收藏
页码:663 / 666
页数:4
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