PHOTOTHERMAL CHARACTERRIZATION BY ATOMIC FORCE MICROSCOPY AROUND GRAIN BOUNDARY IN MULTICRYSTALLINE SILICON MATERIAL

被引：0
|
作者：
Hara, Kenji [1 ]
Takahashi, Takuji [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
来源：
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Nonradiative recombination of photocarriers around grain boundaries is important property in multicrystalline silicon material, and has been investigated through local photothermal (PT) measurements by atomic force microscopy. We found that the PT signal was apparently enhanced near the grain boundary, which is probably due to fast nonradiative recombination at the boundary. In addition, relationship between the dependence of PT signal on incident photon energy and the minority carrier diffusion length is discussed.
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页码：1387 / 1389
页数：3
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