Photothermal Signal and Surface Potential around Grain Boundaries in Multicrystalline Silicon Solar Cells Investigated by Scanning Probe Microscopy

被引：12
|
作者：
Hara, Kenji [1 ]
Takahashi, Takuji [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 02期
基金：
日本学术振兴会;
关键词：
POLYCRYSTALLINE SILICON; FORCE MICROSCOPY; PHOTOLUMINESCENCE; RECOMBINATION; WAFERS;
D O I：
10.1143/APEX.5.022301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The nonradiative recombination property of photocarriers is investigated around grain boundaries (GBs) in multicrystalline Si solar cells via local measurements of the photothermal (PT) signal using a dual sampling method in atomic force microscopy. An enhancement of the PT signal was observed around some specific GBs, where a change in the surface potential was also observed by Kelvin probe force microscopy. We therefore deduce that impurity segregation occurs in those areas, and that the PT signal enhancement and surface potential change are respectively attributable to the enhancement of carrier recombination by those impurity levels and the ionization of impurities. (C) 2012 The Japan Society of Applied Physics
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页数：3
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