Epitaxy of gallium nitride in semi-polar direction on silicon

被引：10

作者：

Bessolov, V. N. ^{[1
]}

Zhilyaev, Yu. V. ^{[1
]}

Konenkova, E. V. ^{[1
]}

Poletaev, N. K. ^{[1
]}

Sharofidinov, Sh. ^{[1
]}

Shcheglov, M. P. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2012年 / 38卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

VAPOR-PHASE EPITAXY; GAN; GROWTH; FILMS;

D O I：

10.1134/S1063785012010051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The idea of a new method for growing gallium nitride (GaN) epilayers on (100)-oriented silicon substrates is disclosed. It has been experimentally established that the formation of a special oriented thin (600 nm) buffer layer of aluminum nitride (AlN) by hydride-chloride vapor-phase epitaxy (HVPE) makes possible the growth of GaN in semi-polar direction. For the best epilayers obtained by this method, the X-ray rocking curve half-width is omega(theta)(0004) = 30 arcmin. The photoluminescence spectra of GaN films measured at 77 K exhibit both exciton and donor-acceptor recombination bands.

引用

页码：9 / 11

页数：3

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M. P. Shcheglov
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